IRG7CH75K10EF-R IGBT Power Module Transistors IGBTs Single
Kategoria:
Moduł mocy IGBT
Cena £:
Negotiable
Metoda płatności:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specyfikacje
Opis:
IGBT 1200 V ULTRA SZYBKA MATRYCA
Numer części:
IRG7CH75K10EF-R
Producent:
Technologie firmy Infineon
Kategoria:
Tranzystory - IGBT - Pojedyncze
Rodzina:
Tranzystory - IGBT - Pojedyncze
Wprowadzenie
IRG7CH75K10EF-R Specifications
| Part Status | Obsolete |
|---|---|
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | 1.53V @ 15V, 20A |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 500nC |
| Td (on/off) @ 25°C | 120ns/445ns |
| Test Condition | 600V, 100A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
IRG7CH75K10EF-R Packaging
Detection
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Magazyn:
MOQ:
Negotiable