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Do domu > produkty > Moduł mocy IGBT > IXYH75N65C3H1 IGBT Power Module Transistors IGBTs Single

IXYH75N65C3H1 IGBT Power Module Transistors IGBTs Single

Kategoria:
Moduł mocy IGBT
Cena £:
Negotiable
Metoda płatności:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specyfikacje
Numer części:
IXYH75N65C3H1
Producent:
IXYS
Opis:
IGBT 650V 170A 750W TO247
Kategoria:
Tranzystory - IGBT - Pojedyncze
Rodzina:
Tranzystory - IGBT - Pojedyncze
Seria:
GenX3™, XPT™
Wprowadzenie

IXYH75N65C3H1 Specifications

Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 170A
Current - Collector Pulsed (Icm) 360A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
Power - Max 750W
Switching Energy 2.8mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 123nC
Td (on/off) @ 25°C 27ns/93ns
Test Condition 400V, 60A, 3 Ohm, 15V
Reverse Recovery Time (trr) 150ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 (IXYH)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IXYH75N65C3H1 Packaging

Detection

IXYH75N65C3H1 IGBT Power Module Transistors IGBTs SingleIXYH75N65C3H1 IGBT Power Module Transistors IGBTs SingleIXYH75N65C3H1 IGBT Power Module Transistors IGBTs SingleIXYH75N65C3H1 IGBT Power Module Transistors IGBTs Single

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Magazyn:
MOQ:
Negotiable